BRG60N60D Todos los transistores

 

BRG60N60D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BRG60N60D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 310 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 155 ℃
   trⓘ - Tiempo de subida, typ: 35 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Paquete / Cubierta: TO3P
     - Selección de transistores por parámetros

 

BRG60N60D Datasheet (PDF)

 ..1. Size:768K  blue-rocket-elect
 brg60n60d.pdf pdf_icon

BRG60N60D

BRG60N60D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature

 7.1. Size:1988K  1
 brg60n65d.pdf pdf_icon

BRG60N60D

BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature

 7.2. Size:1988K  blue-rocket-elect
 brg60n65d.pdf pdf_icon

BRG60N60D

BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IKFW60N60EH3 | IXGH60N60C3 | NCE15TD120BT | NCE07TD60BK

 

 
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