BRG60N60D PDF and Equivalents Search

 

BRG60N60D Specs and Replacement

Type Designator: BRG60N60D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 310 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 155 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 35 nS

Coesⓘ - Output Capacitance, typ: 300 pF

Package: TO3P

 BRG60N60D Substitution

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BRG60N60D datasheet

 ..1. Size:768K  blue-rocket-elect
 brg60n60d.pdf pdf_icon

BRG60N60D

BRG60N60D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , , RoHS Built in fast recovery diode, Saturation voltage positive temperature ... See More ⇒

 7.1. Size:1988K  1
 brg60n65d.pdf pdf_icon

BRG60N60D

BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , , RoHS Built in fast recovery diode, Saturation voltage positive temperature ... See More ⇒

 7.2. Size:1988K  blue-rocket-elect
 brg60n65d.pdf pdf_icon

BRG60N60D

BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , , RoHS Built in fast recovery diode, Saturation voltage positive temperature ... See More ⇒

Specs: TT060U065FB , TT060U065FQ , TT075N065EQ , TT075N120EBC , TT075U065FBC , TT075U065FQB , TT100N120PF1E , BRG10N120D , FGW75N60HD , BRGB6N65DP , BRGH15N120D , BRGH25N120D , NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 , NCE100ED65VTP .

History: DAHF300G120SB | TT040U065FB

Keywords - BRG60N60D transistor spec

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