All IGBT. BRG60N60D Datasheet

 

BRG60N60D IGBT. Datasheet pdf. Equivalent


   Type Designator: BRG60N60D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 310 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 155 ℃
   trⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Qgⓘ - Total Gate Charge, typ: 135 nC
   Package: TO3P

 BRG60N60D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BRG60N60D Datasheet (PDF)

 ..1. Size:768K  blue-rocket-elect
 brg60n60d.pdf

BRG60N60D BRG60N60D

BRG60N60D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature

 7.1. Size:1988K  1
 brg60n65d.pdf

BRG60N60D BRG60N60D

BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature

 7.2. Size:1988K  blue-rocket-elect
 brg60n65d.pdf

BRG60N60D BRG60N60D

BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ,RoHS Built in fast recovery diode, Saturation voltage positive temperature

Datasheet: TT060U065FB , TT060U065FQ , TT075N065EQ , TT075N120EBC , TT075U065FBC , TT075U065FQB , TT100N120PF1E , BRG10N120D , FGH30S130P , BRGB6N65DP , BRGH15N120D , BRGH25N120D , NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 , NCE100ED65VTP .

 

 
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