NCE25TD120VT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE25TD120VT
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 365 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 72 pF
Paquete / Cubierta: TO-247
- Selección de transistores por parámetros
NCE25TD120VT Datasheet (PDF)
nce25td120vt.pdf

Pb Free ProductNCE25TD120VT1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120vtp.pdf

Pb Free ProductNCE25TD120VTP1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120vd.pdf

Pb Free ProductNCE25TD120VD1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120lp.pdf

PbFreeProduct NCE25TD120LP 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
Otros transistores... NCE20TD60BP , NCE20TD60BT , NCE20TD65BD , NCE20TH60BF , NCE25TC120HD , NCE25TD120BD , NCE25TD120LP , NCE25TD120VD , GT45F122 , NCE25TD120VTP , NCE25TD120W , NCE25TD120WT , NCE25TD135LP , NCE30TD65BD , NCE30TD65BP , NCE30TD65BT , NCE40ED120VT .
History: STGD4M65DF2 | IXXN100N60B3H1 | XNS40N120T | AUIRG4BC30S-S | FD300R12KS4 | SKM400GA124D | 6MBP25VBA120-50
History: STGD4M65DF2 | IXXN100N60B3H1 | XNS40N120T | AUIRG4BC30S-S | FD300R12KS4 | SKM400GA124D | 6MBP25VBA120-50



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