All IGBT. NCE25TD120VT Datasheet

 

NCE25TD120VT Datasheet and Replacement


   Type Designator: NCE25TD120VT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 365 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 72 pF
   Package: TO-247
      - IGBT Cross-Reference

 

NCE25TD120VT Datasheet (PDF)

 ..1. Size:1458K  ncepower
nce25td120vt.pdf pdf_icon

NCE25TD120VT

Pb Free ProductNCE25TD120VT1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 0.1. Size:1476K  ncepower
nce25td120vtp.pdf pdf_icon

NCE25TD120VT

Pb Free ProductNCE25TD120VTP1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 3.1. Size:1385K  ncepower
nce25td120vd.pdf pdf_icon

NCE25TD120VT

Pb Free ProductNCE25TD120VD1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 4.1. Size:382K  ncepower
nce25td120lp.pdf pdf_icon

NCE25TD120VT

PbFreeProduct NCE25TD120LP 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MG150HF12MIC2 | 7MBP100VDA060-50 | SGS5N60RUF | MG1250H-XN2MM | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH

Keywords - NCE25TD120VT transistor datasheet

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