NCE25TD120VT Даташит. Аналоги. Параметры и характеристики.
Наименование: NCE25TD120VT
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 365 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 17 nS
Coesⓘ - Выходная емкость, типовая: 72 pF
Qg ⓘ - Общий заряд затвора, typ: 146 nC
Тип корпуса: TO-247
Аналог (замена) для NCE25TD120VT
NCE25TD120VT Datasheet (PDF)
nce25td120vt.pdf

Pb Free ProductNCE25TD120VT1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120vtp.pdf

Pb Free ProductNCE25TD120VTP1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120vd.pdf

Pb Free ProductNCE25TD120VD1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120lp.pdf

PbFreeProduct NCE25TD120LP 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
Другие IGBT... NCE20TD60BP , NCE20TD60BT , NCE20TD65BD , NCE20TH60BF , NCE25TC120HD , NCE25TD120BD , NCE25TD120LP , NCE25TD120VD , IHW20N120R3 , NCE25TD120VTP , NCE25TD120W , NCE25TD120WT , NCE25TD135LP , NCE30TD65BD , NCE30TD65BP , NCE30TD65BT , NCE40ED120VT .



Список транзисторов
Обновления
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