NCE25TD120VT Даташит. Аналоги. Параметры и характеристики.
Наименование: NCE25TD120VT
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 365 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 17 nS
Coesⓘ - Выходная емкость, типовая: 72 pF
Тип корпуса: TO-247
- подбор IGBT транзистора по параметрам
NCE25TD120VT Datasheet (PDF)
nce25td120vt.pdf

Pb Free ProductNCE25TD120VT1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120vtp.pdf

Pb Free ProductNCE25TD120VTP1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120vd.pdf

Pb Free ProductNCE25TD120VD1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120lp.pdf

PbFreeProduct NCE25TD120LP 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: APT40GP90BG | IRG7PH28UD1
History: APT40GP90BG | IRG7PH28UD1



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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