NCE30TD65BT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE30TD65BT
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 230 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 106 pF
Qgⓘ - Carga total de la puerta, typ: 132 nC
Paquete / Cubierta: TO-247
- Selección de transistores por parámetros
NCE30TD65BT Datasheet (PDF)
nce30td65bt.pdf

Pb Free ProductNCE30TD65BT650V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce30td65bd.pdf

Pb Free ProductNCE30TD65BD650V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce30td65bp.pdf

Pb Free ProductNCE30TD65BP650V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce30td60bp.pdf

Pb Free ProductNCE30TD60BP600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
Otros transistores... NCE25TD120VD , NCE25TD120VT , NCE25TD120VTP , NCE25TD120W , NCE25TD120WT , NCE25TD135LP , NCE30TD65BD , NCE30TD65BP , SGT50T65FD1PN , NCE40ED120VT , NCE40ED120VTP , NCE40ED65BF , NCE40ED65BT , NCE40ED65VT , NCE40ED75VT , NCE40ER65BP , NCE40ER65BPF .
History: STGWA30IH65DF | IXGR50N160H1
History: STGWA30IH65DF | IXGR50N160H1



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