NCE30TD65BT PDF and Equivalents Search

 

NCE30TD65BT Specs and Replacement

Type Designator: NCE30TD65BT

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 230 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 106 pF

Package: TO-247

 NCE30TD65BT Substitution

- IGBTⓘ Cross-Reference Search

 

NCE30TD65BT datasheet

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NCE30TD65BT

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NCE30TD65BT

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 4.2. Size:1031K  ncepower
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NCE30TD65BT

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NCE30TD65BT

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Specs: NCE25TD120VD, NCE25TD120VT, NCE25TD120VTP, NCE25TD120W, NCE25TD120WT, NCE25TD135LP, NCE30TD65BD, NCE30TD65BP, IKW50N60T, NCE40ED120VT, NCE40ED120VTP, NCE40ED65BF, NCE40ED65BT, NCE40ED65VT, NCE40ED75VT, NCE40ER65BP, NCE40ER65BPF

Keywords - NCE30TD65BT transistor spec

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