NCE40TD65B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE40TD65B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 288 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 136 pF
Encapsulados: TO-220
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NCE40TD65B datasheet
nce40td65b.pdf
Pb Free Product NCE40TD65B 650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce40td65bt.pdf
PbFreeProduct NCE40TD65BT 650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High sp
Otros transistores... NCE40T60BP , NCE40TD120LP , NCE40TD120LT , NCE40TD120UT , NCE40TD120WW , NCE40TD135LP , NCE40TD135LT , NCE40TD60BPF , FGH75T65UPD , NCE40TD65BP , NCE40TH60BPF , NCE40TH60BT , NCE50ED120VT , NCE50ED120VTP , NCE50ED65VT , NCE50EU65UT , NCE50TD120BP .
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