NCE40TD65B Specs and Replacement
Type Designator: NCE40TD65B
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 288 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 136 pF
Package: TO-220
NCE40TD65B Substitution - IGBTⓘ Cross-Reference Search
NCE40TD65B datasheet
nce40td65b.pdf
Pb Free Product NCE40TD65B 650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
nce40td65bt.pdf
PbFreeProduct NCE40TD65BT 650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High sp... See More ⇒
Specs: NCE40T60BP, NCE40TD120LP, NCE40TD120LT, NCE40TD120UT, NCE40TD120WW, NCE40TD135LP, NCE40TD135LT, NCE40TD60BPF, FGH75T65UPD, NCE40TD65BP, NCE40TH60BPF, NCE40TH60BT, NCE50ED120VT, NCE50ED120VTP, NCE50ED65VT, NCE50EU65UT, NCE50TD120BP
Keywords - NCE40TD65B transistor spec
NCE40TD65B cross reference
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History: NCE40TH60BPF
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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