NCE50TD120WT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE50TD120WT
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 535 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 214 pF
Paquete / Cubierta: TO-247
- Selección de transistores por parámetros
NCE50TD120WT Datasheet (PDF)
nce50td120wt.pdf

Pb Free ProductNCE50TD120WT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
nce50td120ww.pdf

Pb Free ProductNCE50TD120WW1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
nce50td120bt.pdf

Pb Free ProductNCE50TD120BT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
nce50td120vt.pdf

Pb Free ProductNCE50TD120VT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
Otros transistores... NCE50ED120VT , NCE50ED120VTP , NCE50ED65VT , NCE50EU65UT , NCE50TD120BP , NCE50TD120BT , NCE50TD120VT , NCE50TD120VTP , GT30J122 , NCE50TD120WW , NCE60TD120UT , NCE60TD65BP , NCE60TD65BT4 , NCE75ED120VT , NCE75ED120VT4 , NCE75ED120VTP , NCE75ED120VTP4 .
History: 2N6978 | IXSH30N60AU1 | APT80GA60S | 6MBP25VBA120-50 | IXXN100N60B3H1 | AUIRG4BC30S-S | SKM400GA124D
History: 2N6978 | IXSH30N60AU1 | APT80GA60S | 6MBP25VBA120-50 | IXXN100N60B3H1 | AUIRG4BC30S-S | SKM400GA124D



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