All IGBT. NCE50TD120WT Datasheet

 

NCE50TD120WT Datasheet and Replacement


   Type Designator: NCE50TD120WT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 535 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 214 pF
   Package: TO-247
      - IGBT Cross-Reference

 

NCE50TD120WT Datasheet (PDF)

 ..1. Size:1473K  ncepower
 nce50td120wt.pdf pdf_icon

NCE50TD120WT

Pb Free ProductNCE50TD120WT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 3.1. Size:1468K  ncepower
 nce50td120ww.pdf pdf_icon

NCE50TD120WT

Pb Free ProductNCE50TD120WW1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 4.1. Size:1491K  ncepower
 nce50td120bt.pdf pdf_icon

NCE50TD120WT

Pb Free ProductNCE50TD120BT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 4.2. Size:1676K  ncepower
 nce50td120vt.pdf pdf_icon

NCE50TD120WT

Pb Free ProductNCE50TD120VT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

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History: MMG100SR120UK | MITB10WB1200TMH | JNG15T60PS | APT25GN120B2DQ2G | STGBL6NC60DI | MMIX4B22N300 | 7MBP100VDA060-50

Keywords - NCE50TD120WT transistor datasheet

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