NCE50TD120WT datasheet, аналоги, основные параметры

Наименование: NCE50TD120WT  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 535 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃

tr ⓘ - Время нарастания типовое: 17 nS

Coesⓘ - Выходная емкость, типовая: 214 pF

Тип корпуса: TO-247

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 Аналог (замена) для NCE50TD120WT

- подбор ⓘ IGBT транзистора по параметрам

 

NCE50TD120WT даташит

 ..1. Size:1473K  ncepower
 nce50td120wt.pdf pdf_icon

NCE50TD120WT

Pb Free Product NCE50TD120WT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

 3.1. Size:1468K  ncepower
 nce50td120ww.pdf pdf_icon

NCE50TD120WT

Pb Free Product NCE50TD120WW 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

 4.1. Size:1491K  ncepower
 nce50td120bt.pdf pdf_icon

NCE50TD120WT

Pb Free Product NCE50TD120BT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

 4.2. Size:1676K  ncepower
 nce50td120vt.pdf pdf_icon

NCE50TD120WT

Pb Free Product NCE50TD120VT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE50ED120VT, NCE50ED120VTP, NCE50ED65VT, NCE50EU65UT, NCE50TD120BP, NCE50TD120BT, NCE50TD120VT, NCE50TD120VTP, FGH30S130P, NCE50TD120WW, NCE60TD120UT, NCE60TD65BP, NCE60TD65BT4, NCE75ED120VT, NCE75ED120VT4, NCE75ED120VTP, NCE75ED120VTP4