NCE75ED120VT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE75ED120VT  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 650 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 55 nS

Coesⓘ - Capacitancia de salida, typ: 169 pF

Encapsulados: TO247

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NCE75ED120VT datasheet

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NCE75ED120VT

NCE75ED120VT 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =

 0.1. Size:1233K  ncepower
 nce75ed120vtp.pdf pdf_icon

NCE75ED120VT

NCE75ED120VTP 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC

 0.2. Size:1131K  ncepower
 nce75ed120vt4.pdf pdf_icon

NCE75ED120VT

NCE75ED120VT4 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC

 0.3. Size:1144K  ncepower
 nce75ed120vtp4.pdf pdf_icon

NCE75ED120VT

NCE75ED120VTP4 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC

MOSTRAR MÁS

Otros transistores... NCE50TD120BT, NCE50TD120VT, NCE50TD120VTP, NCE50TD120WT, NCE50TD120WW, NCE60TD120UT, NCE60TD65BP, NCE60TD65BT4, STGW60V60DF, NCE75ED120VT4, NCE75ED120VTP, NCE75ED120VTP4, NCE75ED65BT, NCE75ED65VT, NCE75ED65VT4, NCE75ED65VTP, NCE75ED75VT