All IGBT. NCE75ED120VT Datasheet

 

NCE75ED120VT Datasheet and Replacement


   Type Designator: NCE75ED120VT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 650 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 169 pF
   Package: TO247
      - IGBT Cross-Reference

 

NCE75ED120VT Datasheet (PDF)

 ..1. Size:1219K  ncepower
 nce75ed120vt.pdf pdf_icon

NCE75ED120VT

NCE75ED120VT1200V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC =

 0.1. Size:1233K  ncepower
 nce75ed120vtp.pdf pdf_icon

NCE75ED120VT

NCE75ED120VTP1200V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

 0.2. Size:1131K  ncepower
 nce75ed120vt4.pdf pdf_icon

NCE75ED120VT

NCE75ED120VT41200V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

 0.3. Size:1144K  ncepower
 nce75ed120vtp4.pdf pdf_icon

NCE75ED120VT

NCE75ED120VTP41200V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

SHOW MORE

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: DM2G300SH6A | IGB30N60T | HGTP10N120BN | F3L75R07W2E3_B11 | CT20ASL-8 | STGB10M65DF2 | MMG75SR120UZA

Keywords - NCE75ED120VT transistor datasheet

 NCE75ED120VT cross reference
 NCE75ED120VT equivalent finder
 NCE75ED120VT lookup
 NCE75ED120VT substitution
 NCE75ED120VT replacement

 

 
Back to Top

 


 
.