12N60C3D Todos los transistores

 

12N60C3D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 12N60C3D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 104

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.65

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 24

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 28

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220AB

Búsqueda de reemplazo de 12N60C3D - IGBT

 

12N60C3D Datasheet (PDF)

1.1. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi

12N60C3D
12N60C3D

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes • 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar • Short Circuit Rating transistors. The

1.2. hgtg12n60c3d.pdf Size:120K _fairchild_semi

12N60C3D
12N60C3D

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching • Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar • Short Circuit Rating transistors. The device has t

 1.3. hgtg12n60c3d .pdf Size:102K _harris_semi

12N60C3D
12N60C3D

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 24A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MO

1.4. hgtg12n60c3d.pdf Size:106K _harris_semi

12N60C3D
12N60C3D

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package • 24A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 210ns at TJ = +150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage swit

Otros transistores... 10N40C1D , 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , IKW50N60H3 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

 

 
Back to Top

 


12N60C3D
  12N60C3D
  12N60C3D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: FMG2G400US60 | NGD8201AN | MSG50N350FH | GT15Q102 | PSTG75HST12 | PSTG50HST12 | PSTG25HTT12 | PSTG25HDT12 | PS21265-P | PS21265-AP |

 

 

 
Back to Top