All IGBT. 12N60C3D Datasheet

 

12N60C3D IGBT. Datasheet pdf. Equivalent

Type Designator: 12N60C3D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 104

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 24

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 28

Package: TO220AB

12N60C3D Transistor Equivalent Substitute - IGBT Cross-Reference Search

12N60C3D IGBT. Datasheet pdf. Equivalent

Type Designator: 12N60C3D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 104

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 24

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 28

Package: TO220AB

12N60C3D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

12N60C3D Datasheet (PDF)

0.1. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi

12N60C3D
12N60C3D

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes • 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar • Short Circuit Rating transistors. The

0.2. hgtg12n60c3d.pdf Size:120K _fairchild_semi

12N60C3D
12N60C3D

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching • Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar • Short Circuit Rating transistors. The device has t

 0.3. hgtg12n60c3d .pdf Size:102K _harris_semi

12N60C3D
12N60C3D

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 24A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MO

0.4. hgtg12n60c3d.pdf Size:106K _harris_semi

12N60C3D
12N60C3D

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package • 24A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 210ns at TJ = +150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage swit

Datasheet: 10N40C1D , 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , IKW50N60H3 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

 

 
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