TGPF20N60FDR PDF and Equivalents Search

 

TGPF20N60FDR Specs and Replacement


   Type Designator: TGPF20N60FDR
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 48 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   tr ⓘ - Rise Time, typ: 9 nS
   Coesⓘ - Output Capacitance, typ: 80 pF
   Package: TO220F
 

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TGPF20N60FDR datasheet

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TGPF20N60FDR

TGPF20N60FDR Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s 175 Operating Temperature RoHS Compliant JEDEC Qualification Applications Motor Drive, Air Conditioner, Inverter, Solar Devic... See More ⇒

Specs: TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , FGPF4536 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

Keywords - TGPF20N60FDR transistor spec

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