All IGBT. TGPF20N60FDR Datasheet

 

TGPF20N60FDR IGBT. Datasheet pdf. Equivalent


   Type Designator: TGPF20N60FDR
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 48 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 9 nS
   Coesⓘ - Output Capacitance, typ: 80 pF
   Qgⓘ - Total Gate Charge, typ: 102 nC
   Package: TO220F

 TGPF20N60FDR Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TGPF20N60FDR Datasheet (PDF)

 ..1. Size:883K  trinnotech
 tgpf20n60fdr.pdf

TGPF20N60FDR TGPF20N60FDR

TGPF20N60FDRField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s 175 Operating Temperature RoHS Compliant JEDEC QualificationApplicationsMotor Drive, Air Conditioner, Inverter, SolarDevic

Datasheet: TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , RJP30H2A , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

 

 
Back to Top