TGPF20N60FDR Datasheet and Replacement
Type Designator: TGPF20N60FDR
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 48 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 9 nS
Coesⓘ - Output Capacitance, typ: 80 pF
Package: TO220F
TGPF20N60FDR Transistor Equivalent Substitute - IGBT Cross-Reference Search
TGPF20N60FDR Datasheet (PDF)
tgpf20n60fdr.pdf
TGPF20N60FDR Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s 175 Operating Temperature RoHS Compliant JEDEC Qualification Applications Motor Drive, Air Conditioner, Inverter, Solar Devic... See More ⇒
Datasheet: TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , FGPF4536 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .
History: 1MB05D-120 | 1MBC05-060 | 1MBC10-060 | 1MB10-120
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History: 1MB05D-120 | 1MBC05-060 | 1MBC10-060 | 1MB10-120
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