BLG15T65FUA-A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLG15T65FUA-A
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 28 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 41 pF
Qgⓘ - Carga total de la puerta, typ: 38 nC
Paquete / Cubierta: TO-220F
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BLG15T65FUA-A Datasheet (PDF)
blg15t65fua-a blg15t65fua-b blg15t65fua-p.pdf
BLG15T65FUA IGBT 1Description Step-Down Converter BLG15T65FUA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V
blg15t65ful-b blg15t65ful-p blg15t65ful-a.pdf
BLG15T65FUL IGBT 1Description Step-Down Converter BLG15T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized swi hing CE(sat) tcperformance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and low V CE(sat)applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI 1
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
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