All IGBT. BLG15T65FUA-A Datasheet

 

BLG15T65FUA-A IGBT. Datasheet pdf. Equivalent


   Type Designator: BLG15T65FUA-A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 28 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 41 pF
   Qgⓘ - Total Gate Charge, typ: 38 nC
   Package: TO-220F

 BLG15T65FUA-A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BLG15T65FUA-A Datasheet (PDF)

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 blg15t65fua-a blg15t65fua-b blg15t65fua-p.pdf

BLG15T65FUA-A BLG15T65FUA-A

BLG15T65FUA IGBT 1Description Step-Down Converter BLG15T65FUA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

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 blg15t65ful-b blg15t65ful-p blg15t65ful-a.pdf

BLG15T65FUA-A BLG15T65FUA-A

BLG15T65FUL IGBT 1Description Step-Down Converter BLG15T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized swi hing CE(sat) tcperformance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and low V CE(sat)applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI 1

Datasheet: NCE75TD120BTP4 , NCE75TD120VT , NCE75TD120WT , NCE75TD120WT4 , NCE75TD120WW , NCE80TC65BT , NCE80TD65BT4 , BLG10T65FUL-D , GT30F124 , BLG15T65FUA-B , BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , BLG20T65FDLA-P , BLG20T65FDLA-F .

 

 
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