BLG20T65FDLA-P Todos los transistores

 

BLG20T65FDLA-P - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLG20T65FDLA-P
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 136 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   trⓘ - Tiempo de subida, typ: 17 nS
   Coesⓘ - Capacitancia de salida, typ: 43 pF
   Qgⓘ - Carga total de la puerta, typ: 44 nC
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

BLG20T65FDLA-P Datasheet (PDF)

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 blg20t65fdla-a blg20t65fdla-p blg20t65fdla-f blg20t65fdla-b.pdf pdf_icon

BLG20T65FDLA-P

BLG20T65FDLA IGBT 1Description Step-Down Converter BLG20T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI

 5.1. Size:974K  belling
 blg20t65fula-p blg20t65fula-a.pdf pdf_icon

BLG20T65FDLA-P

BLG20T65FULA IGBT 1Description Step-Down Converter BLG20T65FULA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI

Otros transistores... BLG10T65FUL-D , BLG15T65FUA-A , BLG15T65FUA-B , BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , MBQ60T65PES , BLG20T65FDLA-F , BLG20T65FDLA-B , BLG20T65FULA-P , BLG20T65FULA-A , BLG3040-D , BLG3040-B , BLG3040-P , BLG3040-I .

 

 
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