BLG20T65FDLA-P Datasheet. Specs and Replacement

Type Designator: BLG20T65FDLA-P  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 136 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 43 pF

Package: TO-220

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BLG20T65FDLA-P datasheet

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BLG20T65FDLA-P

BLG20T65FDLA IGBT 1 Description Step-Down Converter BLG20T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . g The IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat) KEY CHARACTERISTICS Parameter Value Unit V 650 V CES I ... See More ⇒

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BLG20T65FDLA-P

BLG20T65FULA IGBT 1 Description Step-Down Converter BLG20T65FULA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . g The IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat) KEY CHARACTERISTICS Parameter Value Unit V 650 V CES I ... See More ⇒

Specs: BLG10T65FUL-D, BLG15T65FUA-A, BLG15T65FUA-B, BLG15T65FUA-P, BLG15T65FUL-B, BLG15T65FUL-P, BLG15T65FUL-A, BLG20T65FDLA-A, GT50JR22, BLG20T65FDLA-F, BLG20T65FDLA-B, BLG20T65FULA-P, BLG20T65FULA-A, BLG3040-D, BLG3040-B, BLG3040-P, BLG3040-I

Keywords - BLG20T65FDLA-P transistor spec

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