BLG20T65FULA-P - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLG20T65FULA-P
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 136 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 43 pF
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de BLG20T65FULA-P IGBT
BLG20T65FULA-P Datasheet (PDF)
blg20t65fula-p blg20t65fula-a.pdf

BLG20T65FULA IGBT 1Description Step-Down Converter BLG20T65FULA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI
blg20t65fdla-a blg20t65fdla-p blg20t65fdla-f blg20t65fdla-b.pdf

BLG20T65FDLA IGBT 1Description Step-Down Converter BLG20T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI
Otros transistores... BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , BLG20T65FDLA-P , BLG20T65FDLA-F , BLG20T65FDLA-B , GT30J127 , BLG20T65FULA-A , BLG3040-D , BLG3040-B , BLG3040-P , BLG3040-I , BLG40T120FDH-F , BLG40T120FUH-F , BLG40T120FUK-F .
History: VS-GT50TP60N | FGHL40S65UQ | IXGA30N60C3 | 2MBI600NT-060 | SGW13N60UFD | APT50GF60AR | NSGM150GB120B
History: VS-GT50TP60N | FGHL40S65UQ | IXGA30N60C3 | 2MBI600NT-060 | SGW13N60UFD | APT50GF60AR | NSGM150GB120B



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