BLG20T65FULA-P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLG20T65FULA-P  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 136 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 17 nS

Coesⓘ - Capacitancia de salida, typ: 43 pF

Encapsulados: TO-220

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BLG20T65FULA-P datasheet

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BLG20T65FULA-P

BLG20T65FULA IGBT 1 Description Step-Down Converter BLG20T65FULA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . g The IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat) KEY CHARACTERISTICS Parameter Value Unit V 650 V CES I

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BLG20T65FULA-P

BLG20T65FDLA IGBT 1 Description Step-Down Converter BLG20T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . g The IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat) KEY CHARACTERISTICS Parameter Value Unit V 650 V CES I

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