All IGBT. BLG20T65FULA-P Datasheet

 

BLG20T65FULA-P IGBT. Datasheet pdf. Equivalent


   Type Designator: BLG20T65FULA-P
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 136 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 43 pF
   Qgⓘ - Total Gate Charge, typ: 44 nC
   Package: TO-220

 BLG20T65FULA-P Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BLG20T65FULA-P Datasheet (PDF)

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 blg20t65fula-p blg20t65fula-a.pdf

BLG20T65FULA-P BLG20T65FULA-P

BLG20T65FULA IGBT 1Description Step-Down Converter BLG20T65FULA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI

 5.1. Size:1175K  belling
 blg20t65fdla-a blg20t65fdla-p blg20t65fdla-f blg20t65fdla-b.pdf

BLG20T65FULA-P BLG20T65FULA-P

BLG20T65FDLA IGBT 1Description Step-Down Converter BLG20T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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