BLG20T65FULA-P Datasheet and Replacement
Type Designator: BLG20T65FULA-P
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 136 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 43 pF
Package: TO-220
BLG20T65FULA-P substitution
BLG20T65FULA-P Datasheet (PDF)
blg20t65fula-p blg20t65fula-a.pdf

BLG20T65FULA IGBT 1Description Step-Down Converter BLG20T65FULA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI
blg20t65fdla-a blg20t65fdla-p blg20t65fdla-f blg20t65fdla-b.pdf

BLG20T65FDLA IGBT 1Description Step-Down Converter BLG20T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI
Datasheet: BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , BLG20T65FDLA-P , BLG20T65FDLA-F , BLG20T65FDLA-B , GT30J127 , BLG20T65FULA-A , BLG3040-D , BLG3040-B , BLG3040-P , BLG3040-I , BLG40T120FDH-F , BLG40T120FUH-F , BLG40T120FUK-F .
History: NGTB50N60S1
Keywords - BLG20T65FULA-P transistor datasheet
BLG20T65FULA-P cross reference
BLG20T65FULA-P equivalent finder
BLG20T65FULA-P lookup
BLG20T65FULA-P substitution
BLG20T65FULA-P replacement
History: NGTB50N60S1



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