BLG40T65FDK-W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLG40T65FDK-W  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 300 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 35 nS

Coesⓘ - Capacitancia de salida, typ: 116 pF

Encapsulados: TO-3PN

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BLG40T65FDK-W datasheet

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BLG40T65FDK-W

BLG40T65FDK IGBT 1 Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

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BLG40T65FDK-W

BLG40T65FDL IGBT 1 Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

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 blg40t65ful-f blg40t65ful-k blg40t65ful-w.pdf pdf_icon

BLG40T65FDK-W

BLG40T65FUL IGBT 1 Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

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 blg40t65fuk-w blg40t65fuk-f.pdf pdf_icon

BLG40T65FDK-W

BLG40T65FUK IGBT 1 Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

MOSTRAR MÁS

Otros transistores... BLG20T65FULA-A, BLG3040-D, BLG3040-B, BLG3040-P, BLG3040-I, BLG40T120FDH-F, BLG40T120FUH-F, BLG40T120FUK-F, RJP30H1DPD, BLG40T65FDK-F, BLG40T65FDL-F, BLG40T65FDL-K, BLG40T65FDL-W, BLG40T65FUK-W, BLG40T65FUK-F, BLG40T65FUL-F, BLG40T65FUL-K