All IGBT. BLG40T65FDK-W Datasheet

 

BLG40T65FDK-W Datasheet and Replacement


   Type Designator: BLG40T65FDK-W
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 116 pF
   Package: TO-3PN
      - IGBT Cross-Reference

 

BLG40T65FDK-W Datasheet (PDF)

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BLG40T65FDK-W

BLG40T65FDK IGBT 1Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

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BLG40T65FDK-W

BLG40T65FDL IGBT 1Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

 5.1. Size:1083K  belling
 blg40t65ful-f blg40t65ful-k blg40t65ful-w.pdf pdf_icon

BLG40T65FDK-W

BLG40T65FUL IGBT 1Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

 5.2. Size:954K  belling
 blg40t65fuk-w blg40t65fuk-f.pdf pdf_icon

BLG40T65FDK-W

BLG40T65FUK IGBT 1Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

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Keywords - BLG40T65FDK-W transistor datasheet

 BLG40T65FDK-W cross reference
 BLG40T65FDK-W equivalent finder
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 BLG40T65FDK-W replacement

 

 
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