Справочник IGBT. BLG40T65FDK-W

 

BLG40T65FDK-W - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: BLG40T65FDK-W
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 300
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 80
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.55
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.2
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 35
   Емкость коллектора типовая (Cc), pf: 116
   Общий заряд затвора (Qg), typ, nC: 110
   Тип корпуса: TO-3PN

 Аналог (замена) для BLG40T65FDK-W

 

 

BLG40T65FDK-W Datasheet (PDF)

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BLG40T65FDK-W BLG40T65FDK-W

BLG40T65FDK IGBT 1Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

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 blg40t65fdl-f blg40t65fdl-k blg40t65fdl-w.pdf

BLG40T65FDK-W BLG40T65FDK-W

BLG40T65FDL IGBT 1Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

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 blg40t65ful-f blg40t65ful-k blg40t65ful-w.pdf

BLG40T65FDK-W BLG40T65FDK-W

BLG40T65FUL IGBT 1Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

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 blg40t65fuk-w blg40t65fuk-f.pdf

BLG40T65FDK-W BLG40T65FDK-W

BLG40T65FUK IGBT 1Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

Другие IGBT... BLG20T65FULA-A , BLG3040-D , BLG3040-B , BLG3040-P , BLG3040-I , BLG40T120FDH-F , BLG40T120FUH-F , BLG40T120FUK-F , IHW20N120R3 , BLG40T65FDK-F , BLG40T65FDL-F , BLG40T65FDL-K , BLG40T65FDL-W , BLG40T65FUK-W , BLG40T65FUK-F , BLG40T65FUL-F , BLG40T65FUL-K .

 

 
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