BLG40T65FDL-F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLG40T65FDL-F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 33 nS
Coesⓘ - Capacitancia de salida, typ: 157 pF
Paquete / Cubierta: TO-247
- Selección de transistores por parámetros
BLG40T65FDL-F Datasheet (PDF)
blg40t65fdl-f blg40t65fdl-k blg40t65fdl-w.pdf

BLG40T65FDL IGBT 1Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V
blg40t65fdk-w blg40t65fdk-f.pdf

BLG40T65FDK IGBT 1Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
blg40t65ful-f blg40t65ful-k blg40t65ful-w.pdf

BLG40T65FUL IGBT 1Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V
blg40t65fuk-w blg40t65fuk-f.pdf

BLG40T65FUK IGBT 1Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
Otros transistores... BLG3040-B , BLG3040-P , BLG3040-I , BLG40T120FDH-F , BLG40T120FUH-F , BLG40T120FUK-F , BLG40T65FDK-W , BLG40T65FDK-F , GT30F126 , BLG40T65FDL-K , BLG40T65FDL-W , BLG40T65FUK-W , BLG40T65FUK-F , BLG40T65FUL-F , BLG40T65FUL-K , BLG40T65FUL-W , BLG50T65FDKA-F .
History: STGFW30H65FB | GT60M102 | SGTP40V120FDB2P7 | DIM250PLM33-TL | IRGS4640D | BLG60T65FDK-K
History: STGFW30H65FB | GT60M102 | SGTP40V120FDB2P7 | DIM250PLM33-TL | IRGS4640D | BLG60T65FDK-K



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