BLG40T65FDL-F Datasheet. Specs and Replacement

Type Designator: BLG40T65FDL-F  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 33 nS

Coesⓘ - Output Capacitance, typ: 157 pF

Package: TO-247

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BLG40T65FDL-F datasheet

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 blg40t65fdl-f blg40t65fdl-k blg40t65fdl-w.pdf pdf_icon

BLG40T65FDL-F

BLG40T65FDL IGBT 1 Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V... See More ⇒

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BLG40T65FDL-F

BLG40T65FDK IGBT 1 Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 ... See More ⇒

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BLG40T65FDL-F

BLG40T65FUL IGBT 1 Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V... See More ⇒

 5.2. Size:954K  belling
 blg40t65fuk-w blg40t65fuk-f.pdf pdf_icon

BLG40T65FDL-F

BLG40T65FUK IGBT 1 Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 ... See More ⇒

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Specs: BLG3040-B, BLG3040-P, BLG3040-I, BLG40T120FDH-F, BLG40T120FUH-F, BLG40T120FUK-F, BLG40T65FDK-W, BLG40T65FDK-F, FGA60N65SMD, BLG40T65FDL-K, BLG40T65FDL-W, BLG40T65FUK-W, BLG40T65FUK-F, BLG40T65FUL-F, BLG40T65FUL-K, BLG40T65FUL-W, BLG50T65FDKA-F

Keywords - BLG40T65FDL-F transistor spec

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