BLG40T65FDL-F - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: BLG40T65FDL-F
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 300 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.2 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 33 nS
Coesⓘ - Выходная емкость, типовая: 157 pF
Qgⓘ - Общий заряд затвора, typ: 110 nC
Тип корпуса: TO-247
Аналог (замена) для BLG40T65FDL-F
BLG40T65FDL-F Datasheet (PDF)
blg40t65fdl-f blg40t65fdl-k blg40t65fdl-w.pdf
BLG40T65FDL IGBT 1Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V
blg40t65fdk-w blg40t65fdk-f.pdf
BLG40T65FDK IGBT 1Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
blg40t65ful-f blg40t65ful-k blg40t65ful-w.pdf
BLG40T65FUL IGBT 1Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V
blg40t65fuk-w blg40t65fuk-f.pdf
BLG40T65FUK IGBT 1Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2