BLQG3040-D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLQG3040-D
Tipo de transistor: IGBT + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 370 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 10 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 21 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 2.2 V
trⓘ - Tiempo de subida, typ: 2600 nS
Coesⓘ - Capacitancia de salida, typ: 68 pF
Qgⓘ - Carga total de la puerta, typ: 7.5 nC
Encapsulados: TO-252
Búsqueda de reemplazo de BLQG3040-D IGBT
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BLQG3040-D datasheet
blqg3040-d blqg3040-b.pdf
BLQG3040 IGBT 1 Description BLQG3040 is obtained by advanced ignition Step-Down Converter IGBTs technology which reduce the conduction loss, , enhance the SCIS capability. Internally integrated diodes can provide the voltage clamping without the need for external components. The IGBT is suitable device for automotive ignition circuits, specifically as a coil driver. K
blqg3040a-d blqg3040a-b.pdf
BLQG3040A IGBT 1 Description BLQG3040A is obtained by advanced ignition Step-Down Converter IGBTs technology which reduce the conduction loss, , enhance the SCIS capability. Internally integrated diodes can provide the voltage clamping without the need for external components. The IGBT is suitable device for automotive ignition circuits, specifically as a coil driver.
Otros transistores... BLG60T65FUL-F , BLG60T65FUL-K , BLG60T65FUL-W , BLG75T65FDK-F , BLG75T65FDL-F , BLG75T65FUK-F , BLQG3040A-D , BLQG3040A-B , JT075N065WED , BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , RGT20TM65D , AMPBQ200N75GSFA , AMPBW50N65E .
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