BLQG3040-D Datasheet. Specs and Replacement

Type Designator: BLQG3040-D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 370 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V

|Ic| ⓘ - Maximum Collector Current: 21 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃

tr ⓘ - Rise Time, typ: 2600 nS

Coesⓘ - Output Capacitance, typ: 68 pF

Package: TO-252

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BLQG3040-D datasheet

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BLQG3040-D

BLQG3040 IGBT 1 Description BLQG3040 is obtained by advanced ignition Step-Down Converter IGBTs technology which reduce the conduction loss, , enhance the SCIS capability. Internally integrated diodes can provide the voltage clamping without the need for external components. The IGBT is suitable device for automotive ignition circuits, specifically as a coil driver. K... See More ⇒

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BLQG3040-D

BLQG3040A IGBT 1 Description BLQG3040A is obtained by advanced ignition Step-Down Converter IGBTs technology which reduce the conduction loss, , enhance the SCIS capability. Internally integrated diodes can provide the voltage clamping without the need for external components. The IGBT is suitable device for automotive ignition circuits, specifically as a coil driver. ... See More ⇒

Specs: BLG60T65FUL-F, BLG60T65FUL-K, BLG60T65FUL-W, BLG75T65FDK-F, BLG75T65FDL-F, BLG75T65FUK-F, BLQG3040A-D, BLQG3040A-B, FGH60N60SFD, BLQG3040-B, BLQG50T65FCKA-F, BLQG50T65FDLA-F, BLQG50T65FDLA-K, BLQG50T65FDLA-W, RGT20TM65D, AMPBQ200N75GSFA, AMPBW50N65E

Keywords - BLQG3040-D transistor spec

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