IXGR60N60U1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGR60N60U1  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 300 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7(max) V @25℃

trⓘ - Tiempo de subida, typ: 200 nS

Coesⓘ - Capacitancia de salida, typ: 340 pF

Encapsulados: PLUS247

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IXGR60N60U1 datasheet

 ..1. Size:109K  ixys
 ixgr60n60u1.pdf pdf_icon

IXGR60N60U1

VCES = 600 V Low VCE(sat) IGBT IXGR 60N60U1 IC25 = 75 A with Diode VCE(sat) = 1.7 V ISOPLUS247TM (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C 75 A E Isolated back surface* IC100

 5.1. Size:505K  ixys
 ixgr60n60c2.pdf pdf_icon

IXGR60N60U1

IXGR 60N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60C2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.7 V Lightspeed 2TM Series tfi(typ) = 35 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (ISOLATED TAB) VGES Conti

 5.2. Size:511K  ixys
 ixgr60n60b2d1.pdf pdf_icon

IXGR60N60U1

Advance Technical Data IXGR 60N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 100 ns (Electrically Isolated Back Surface) D1 Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V C (ISOLAT

 5.3. Size:214K  ixys
 ixgr60n60c3d1.pdf pdf_icon

IXGR60N60U1

TM VCES = 600V GenX3 600V IGBT IXGR60N60C3D1 IC110 = 30A w/ Diode VCE(sat) 2.5V (Electrically Isolated Back Surface) tfi(typ) = 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C

MOSTRAR MÁS

Otros transistores... IXGP20N100, IXGP20N60B, IXGP7N60B, IXGP7N60C, IXGP8N100, IXGR32N60C, IXGR32N60CD1, IXGR40N60BD1, FGH60N60SMD, IXGT15N120B, IXGT15N120BD1, IXGT15N120C, IXGT15N120CD1, IXGT20N100, IXGT20N60B, IXGT20N60BD1, IXGT24N60C