Справочник IGBT. IXGR60N60U1

 

IXGR60N60U1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXGR60N60U1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7(max) V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 200 nS
   Coesⓘ - Выходная емкость, типовая: 340 pF
   Qgⓘ - Общий заряд затвора, typ: 200 nC
   Тип корпуса: PLUS247

 Аналог (замена) для IXGR60N60U1

 

 

IXGR60N60U1 Datasheet (PDF)

 ..1. Size:109K  ixys
 ixgr60n60u1.pdf

IXGR60N60U1 IXGR60N60U1

VCES = 600 VLow VCE(sat) IGBT IXGR 60N60U1IC25 = 75 Awith DiodeVCE(sat) = 1.7 VISOPLUS247TM(Electrically Isolated Back Surface)Preliminary dataSymbol Test Conditions Maximum Ratings ISOPLUS247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C 75 A EIsolated back surface*IC100

 5.1. Size:505K  ixys
 ixgr60n60c2.pdf

IXGR60N60U1 IXGR60N60U1

IXGR 60N60C2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60C2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.7 VLightspeed 2TM Seriestfi(typ) = 35 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VC(ISOLATED TAB)VGES Conti

 5.2. Size:511K  ixys
 ixgr60n60b2d1.pdf

IXGR60N60U1 IXGR60N60U1

Advance Technical DataIXGR 60N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60B2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 100 ns(Electrically Isolated Back Surface)D1Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC(ISOLAT

 5.3. Size:214K  ixys
 ixgr60n60c3d1.pdf

IXGR60N60U1 IXGR60N60U1

TMVCES = 600VGenX3 600V IGBTIXGR60N60C3D1IC110 = 30Aw/ DiodeVCE(sat) 2.5V(Electrically Isolated Back Surface)tfi(typ) = 50nsHigh Speed PT IGBT for40-100 kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC

 5.4. Size:180K  ixys
 ixgr60n60c2c1.pdf

IXGR60N60U1 IXGR60N60U1

HiperFASTTM IGBT VCES = 600VIXGR60N60C2C1w/ SiC Anti-Parallel IC110 = 39ADiode VCE(sat) 2.7Vtfi(typ) = 54ns(Electrically Isolated Back Surface)ISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC = 25

 5.5. Size:505K  ixys
 ixgr60n60c2d1.pdf

IXGR60N60U1 IXGR60N60U1

IXGR 60N60C2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60C2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.7 VLightspeed 2TM Seriestfi(typ) = 35 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VC(ISOLATED TAB)VGES Conti

 5.6. Size:192K  ixys
 ixgr60n60c3c1.pdf

IXGR60N60U1 IXGR60N60U1

GenX3TM 600V IGBT VCES = 600VIXGR60N60C3C1w/ SiC Anti-Parallel IC110 = 30ADiode VCE(sat) 2.5Vtfi(typ) = 50ns(Electrically Isolated Back Surface)High Speed PT IGBT for 40-100kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC Isolated T

 5.7. Size:511K  ixys
 ixgr60n60b2.pdf

IXGR60N60U1 IXGR60N60U1

Advance Technical DataIXGR 60N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60B2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 100 ns(Electrically Isolated Back Surface)D1Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC(ISOLAT

Другие IGBT... IXGP20N100 , IXGP20N60B , IXGP7N60B , IXGP7N60C , IXGP8N100 , IXGR32N60C , IXGR32N60CD1 , IXGR40N60BD1 , FGD4536 , IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGT15N120CD1 , IXGT20N100 , IXGT20N60B , IXGT20N60BD1 , IXGT24N60C .

 

 
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