IXGR60N60U1 Specs and Replacement
Type Designator: IXGR60N60U1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7(max) V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
tr ⓘ - Rise Time, typ: 200 nS
Coesⓘ - Output Capacitance, typ: 340 pF
Qg ⓘ - Total Gate Charge, typ: 200 nC
Package: PLUS247
IXGR60N60U1 Substitution - IGBT ⓘ Cross-Reference Search
IXGR60N60U1 datasheet
ixgr60n60u1.pdf
VCES = 600 V Low VCE(sat) IGBT IXGR 60N60U1 IC25 = 75 A with Diode VCE(sat) = 1.7 V ISOPLUS247TM (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C 75 A E Isolated back surface* IC100 ... See More ⇒
ixgr60n60c2.pdf
IXGR 60N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60C2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.7 V Lightspeed 2TM Series tfi(typ) = 35 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (ISOLATED TAB) VGES Conti... See More ⇒
ixgr60n60b2d1.pdf
Advance Technical Data IXGR 60N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 100 ns (Electrically Isolated Back Surface) D1 Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V C (ISOLAT... See More ⇒
ixgr60n60c3d1.pdf
TM VCES = 600V GenX3 600V IGBT IXGR60N60C3D1 IC110 = 30A w/ Diode VCE(sat) 2.5V (Electrically Isolated Back Surface) tfi(typ) = 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C... See More ⇒
Specs: IXGP20N100 , IXGP20N60B , IXGP7N60B , IXGP7N60C , IXGP8N100 , IXGR32N60C , IXGR32N60CD1 , IXGR40N60BD1 , FGH60N60SMD , IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGT15N120CD1 , IXGT20N100 , IXGT20N60B , IXGT20N60BD1 , IXGT24N60C .
Keywords - IXGR60N60U1 transistor spec
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