IXGT20N100 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT20N100

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1000

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 40

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 3

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO268

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IXGT20N100 Datasheet (PDF)

1.1. ixgh20n100 ixgt20n100.pdf Size:53K _ixys

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1000 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V E VGES Continuous ±20 V (TAB) VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C40 A IC90 TC = 90°C20 A ICM TC = 25°C, 1 ms 80 A S

1.2. ixgt20n100.pdf Size:52K _ixys

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1000 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V E VGES Continuous ±20 V (TAB) VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C40 A IC90 TC = 90°C20 A ICM TC = 25°C, 1 ms 80 A S

 2.1. ixgh20n120b ixgt20n120b.pdf Size:568K _ixys

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C40 A TO-247 AD (IXGH) IC110 TC = 110°C20 A ICM

2.2. ixgt20n140c3h1.pdf Size:99K _ixys

Advance Technical Information VCES = 1400V GenX3TM 1400V IGBTs IXGH20N140C3H1 IC100 = 20A w/ Diode IXGT20N140C3H1 ≤ VCE(sat) ≤ ≤ 5.0V ≤ ≤ tfi(typ) = 32ns High-Speed PT IGBTs for 20 - 50 kHz Switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 1400 V C C (Tab) E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES Continuous �

 2.3. ixgh20n120 ixgt20n120.pdf Size:106K _ixys

VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G D S IC25 TC = 25°C40 A IC90 TC = 90°C20 A TO-268 (IXGT) ICM TC = 25°C, 1 ms 80 A

2.4. ixgt20n120.pdf Size:104K _ixys

VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G D S IC25 TC = 25°C40 A IC90 TC = 90°C20 A TO-268 (IXGT) ICM TC = 25°C, 1 ms 80 A

 2.5. ixgt20n120b.pdf Size:565K _ixys

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C40 A TO-247 AD (IXGH) IC110 TC = 110°C20 A ICM

Otros transistores... IXGR32N60C , IXGR32N60CD1 , IXGR40N60BD1 , IXGR60N60U1 , IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGT15N120CD1 , GT60M303 , IXGT20N60B , IXGT20N60BD1 , IXGT24N60C , IXGT24N60CD1 , IXGT28N30 , IXGT28N30A , IXGT28N30B , IXGT28N60B .