All IGBT. IXGT20N100 Datasheet

 

IXGT20N100 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGT20N100

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1000V

Maximum Collector Current |Ic|, A: 40A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 3

Package: TO268

IXGT20N100 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGT20N100 Datasheet (PDF)

1.1. ixgh20n100 ixgt20n100.pdf Size:53K _ixys

IXGT20N100
IXGT20N100

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1000 V G VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25C40 A IC90 TC = 90C20 A ICM TC = 25C, 1 ms 80 A SSOA VGE= 15

1.2. ixgt20n100.pdf Size:52K _igbt_a

IXGT20N100
IXGT20N100

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1000 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V E VGES Continuous ±20 V (TAB) VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C40 A IC90 TC = 90°C20 A ICM TC = 25°C, 1 ms 80 A S

 2.1. ixgh20n120 ixgt20n120.pdf Size:106K _ixys

IXGT20N100
IXGT20N100

VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G D S IC25 TC = 25C40 A IC90 TC = 90C20 A TO-268 (IXGT) ICM TC = 25C, 1 ms 80 A SSOA VGE = 15

2.2. ixgh20n120b ixgt20n120b.pdf Size:568K _ixys

IXGT20N100
IXGT20N100

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C40 A TO-247 AD (IXGH) IC110 TC = 110C20 A ICM TC = 25C, 1

 2.3. ixgt20n120b.pdf Size:565K _igbt_a

IXGT20N100
IXGT20N100

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C40 A TO-247 AD (IXGH) IC110 TC = 110°C20 A ICM

2.4. ixgt20n140c3h1.pdf Size:99K _igbt_a

IXGT20N100
IXGT20N100

Advance Technical Information VCES = 1400V GenX3TM 1400V IGBTs IXGH20N140C3H1 IC100 = 20A w/ Diode IXGT20N140C3H1 ≤ VCE(sat) ≤ ≤ 5.0V ≤ ≤ tfi(typ) = 32ns High-Speed PT IGBTs for 20 - 50 kHz Switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 1400 V C C (Tab) E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES Continuous

 2.5. ixgt20n120.pdf Size:104K _igbt_a

IXGT20N100
IXGT20N100

VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G D S IC25 TC = 25°C40 A IC90 TC = 90°C20 A TO-268 (IXGT) ICM TC = 25°C, 1 ms 80 A

Datasheet: IXGR32N60C , IXGR32N60CD1 , IXGR40N60BD1 , IXGR60N60U1 , IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGT15N120CD1 , GT60M303 , IXGT20N60B , IXGT20N60BD1 , IXGT24N60C , IXGT24N60CD1 , IXGT28N30 , IXGT28N30A , IXGT28N30B , IXGT28N60B .

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