IXGT20N100 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXGT20N100 Specs and Replacement

Type Designator: IXGT20N100

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 100 pF

Qg ⓘ - Total Gate Charge, typ: 73 nC

Package: TO268

IXGT20N100 Substitution

- IGBT ⓘ Cross-Reference Search

IXGT20N100 datasheet

..1. Size:53K ixys
ixgh20n100 ixgt20n100.pdf pdf_icon

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1000 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A S... See More ⇒

..2. Size:52K ixys
ixgt20n100.pdf pdf_icon

6.1. Size:565K ixys
ixgt20n120b.pdf pdf_icon

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC110 TC = 110 C20 A ICM... See More ⇒

6.2. Size:568K ixys
ixgh20n120b ixgt20n120b.pdf pdf_icon