AOD6B60M1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOD6B60M1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 69 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 13 nS
Coesⓘ - Capacitancia de salida, typ: 36 pF
Paquete / Cubierta: TO252
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AOD6B60M1 Datasheet (PDF)
aod6b60m1.pdf
AOD6B60M1TM600V, 6A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 600V 600V Breakdown VoltageIC (TC=100C) 6A Very Fast and Soft Recovery Freewheeling DiodeVCE(sat) (TJ=25C) 1.7V High Efficient Turn-On di/dt Controllability Low VCE(sat) Enables High Efficiencies L
aod6b65mq1e.pdf
AOD6B65MQ1ETM 650V, 6A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 6AC) IGBT copacked with very fast and soft antiparallelVCE(sat) (TJ=25 1.9VC) diode Very good EMI performance with lower turn-on switching losses H
Otros transistores... AOB20B65M1 , AOB30B65LN2V , AOB5B65M1 , AOBS30B65LN , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , IKW75N60T , AOD6B65MQ1E , AOD7B65M3 , AOD8B65MQ1 , AOGF40B65H2AL , AOGF60B65H2AL , AOK20B120D1 , AOK20B120E1 , AOK20B120E2 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2