All IGBT. AOD6B60M1 Datasheet

 

AOD6B60M1 Datasheet and Replacement


   Type Designator: AOD6B60M1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 69 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.1 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 13 nS
   Coesⓘ - Output Capacitance, typ: 36 pF
   Qg ⓘ - Total Gate Charge, typ: 14 nC
   Package: TO252
 

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AOD6B60M1 Datasheet (PDF)

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AOD6B60M1

AOD6B60M1TM600V, 6A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 600V 600V Breakdown VoltageIC (TC=100C) 6A Very Fast and Soft Recovery Freewheeling DiodeVCE(sat) (TJ=25C) 1.7V High Efficient Turn-On di/dt Controllability Low VCE(sat) Enables High Efficiencies L

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AOD6B60M1

AOD6B65MQ1ETM 650V, 6A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 6AC) IGBT copacked with very fast and soft antiparallelVCE(sat) (TJ=25 1.9VC) diode Very good EMI performance with lower turn-on switching losses H

Datasheet: AOB20B65M1 , AOB30B65LN2V , AOB5B65M1 , AOBS30B65LN , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , GT30F126 , AOD6B65MQ1E , AOD7B65M3 , AOD8B65MQ1 , AOGF40B65H2AL , AOGF60B65H2AL , AOK20B120D1 , AOK20B120E1 , AOK20B120E2 .

History: VS-ETF075Y60U | OST60N65HSZF

Keywords - AOD6B60M1 transistor datasheet

 AOD6B60M1 cross reference
 AOD6B60M1 equivalent finder
 AOD6B60M1 lookup
 AOD6B60M1 substitution
 AOD6B60M1 replacement

 

 
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