AOK40B65H1 Todos los transistores

 

AOK40B65H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOK40B65H1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 36 nS
   Coesⓘ - Capacitancia de salida, typ: 175 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

AOK40B65H1 Datasheet (PDF)

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 aok40b65h1.pdf pdf_icon

AOK40B65H1

AOK40B65H1TM650V,40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.9V High efficient turn-on di/dt controllability Very high switching speed Low tur

 5.1. Size:535K  1
 aok40b65h2al.pdf pdf_icon

AOK40B65H1

AOK40B65H2ALTM650V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 40A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu

 5.2. Size:1032K  aosemi
 aok40b65h2al.pdf pdf_icon

AOK40B65H1

AOK40B65H2ALTM650 V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 40AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 2.05VC) High efficient turn-on di/dt controllability Very high switching speed Lo

 5.3. Size:569K  aosemi
 aok40b65hq1.pdf pdf_icon

AOK40B65H1

AOK40B65HQ1TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage Very high switching speedIC (TC=100 40AC) Very low Vf and QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications U

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRG4BC40K | XD040Q120AT1S3 | APTGT100A120D1 | IXGB200N60B3 | 2MBI150VA-120-50 | 2MBI150PC-140 | SKM500GA123D

 

 
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