Справочник IGBT. AOK40B65H1

 

AOK40B65H1 Даташит. Аналоги. Параметры и характеристики.


   Наименование: AOK40B65H1
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 36 nS
   Coesⓘ - Выходная емкость, типовая: 175 pF
   Тип корпуса: TO247
     - подбор IGBT транзистора по параметрам

 

AOK40B65H1 Datasheet (PDF)

 ..1. Size:995K  aosemi
 aok40b65h1.pdf pdf_icon

AOK40B65H1

AOK40B65H1TM650V,40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.9V High efficient turn-on di/dt controllability Very high switching speed Low tur

 5.1. Size:535K  1
 aok40b65h2al.pdf pdf_icon

AOK40B65H1

AOK40B65H2ALTM650V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 40A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu

 5.2. Size:1032K  aosemi
 aok40b65h2al.pdf pdf_icon

AOK40B65H1

AOK40B65H2ALTM650 V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 40AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 2.05VC) High efficient turn-on di/dt controllability Very high switching speed Lo

 5.3. Size:569K  aosemi
 aok40b65hq1.pdf pdf_icon

AOK40B65H1

AOK40B65HQ1TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage Very high switching speedIC (TC=100 40AC) Very low Vf and QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications U

ПОКАЗАТЬ ЕЩЁ

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History: IXBH40N160 | 2MBI150VA-120-50 | XD040Q120AT1S3 | JT050N120F2MA1E | APTGT100A120D1 | 2MBI150PC-140 | SKM500GA123D

 

 
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