AOK40B65H1 PDF and Equivalents Search

 

AOK40B65H1 Specs and Replacement

Type Designator: AOK40B65H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 175 pF

Package: TO247

 AOK40B65H1 Substitution

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AOK40B65H1 datasheet

 ..1. Size:995K  aosemi
 aok40b65h1.pdf pdf_icon

AOK40B65H1

AOK40B65H1 TM 650V,40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.9V High efficient turn-on di/dt controllability Very high switching speed Low tur... See More ⇒

 5.1. Size:535K  1
 aok40b65h2al.pdf pdf_icon

AOK40B65H1

AOK40B65H2AL TM 650V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu... See More ⇒

 5.2. Size:1032K  aosemi
 aok40b65h2al.pdf pdf_icon

AOK40B65H1

AOK40B65H2AL TM 650 V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 40A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 2.05V C) High efficient turn-on di/dt controllability Very high switching speed Lo... See More ⇒

 5.3. Size:569K  aosemi
 aok40b65hq1.pdf pdf_icon

AOK40B65H1

AOK40B65HQ1 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications U... See More ⇒

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Specs: AOK30B135C1, AOK30B135W1, AOK30B65M2, AOK40B120H1, AOK40B120M1, AOK40B120N1, AOK40B120P1, AOK40B60D1, NGD8201N, AOK40B65HQ1, AOK40B65HQ2, AOK40B65HQ3, AOK40B65M3, AOK50B65H1, AOK50B65M2, AOK60B65H1, AOK60B65H2AL

Keywords - AOK40B65H1 transistor spec

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