G25T120D Datasheet. Equivalente

 ..1. Size:988K  cn wxdh
 g25t120d.pdf

G25T120D Insulated Gate Bipolar Transistor General Description V 1200 V CES Using DongHai's proprietary Planar design and advanced I 25 A C FS technology, the 1200V FS IGBT offers superior conduction P T =25 278 W tot C and switching performances, high avalanche ruggedness and V 2.0 V CE(SAT) easy parallel operation. Features FS Trench Technology, Positive temper

 7.1. Size:936K  crhj
 crg25t120bk3s.pdf

 7.2. Size:983K  jiaensemi
 jng25t120hs3.pdf

JNG25T120HS3 IGBT Features 1200V,25A V =2.0V@V =15V,I =25A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switch

 7.3. Size:1115K  jiaensemi
 jng25t120hs.pdf

JNG25T120HS IGBT Features 1200V 25A V =2.1V @V =15V,I =25A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switchi

 7.4. Size:615K  jiaensemi
 jng25t120hfu1.pdf

JNG25T120HFU1 IGBT Features 1200V,25A V =1.8V@V =15V,I =25A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching

 7.5. Size:1431K  jiaensemi
 jng25t120ai.pdf

JNG25T120AI IGBT Features 1200V 25A V =2.0V @V =15V,I =25A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other so

 7.6. Size:599K  jiaensemi
 jng25t120hfu2.pdf

JNG25T120HFU2 IGBT Features 1200V,25A V =1.9V@V =15V,I =25A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching

 7.7. Size:1231K  wuxi china
 crg25t120bk3s.pdf

Silicon FS Trench IGBT CRG25T120BK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 25 A Stop (FS) technology, offering superior conduction and switching 278 W Ptot TC=25 VCE(sat) 2.0 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio

 7.8. Size:784K  wuxi china
 crg25t120bnr3s.pdf

Silicon FS Trench IGBT CRG25T120BNR3S General Description VCES 1200 V Using CRM's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25 ) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-3P N Features T

 7.9. Size:3082K  cn maspower
 msg25t120fpc.pdf

MSG25T120FPC N-Channel IGBT Features Low Gate charge FS Technology VCE(sat) = 1.68V @ IC = 25A High Input Impedance Short circuit withstand time 10 s Applications PFC UPS Inverter Absolute Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 CES V Gate-emitter voltage V 30 GES T =25 C 50 C Collector curre I C T

 7.10. Size:8529K  cn maspower
 msg25t120fqc.pdf

MSG25T120FQC Features Low gate charge FS Technology Saturation voltage VCE(sat),typ= 1.75V @ IC=25A and TC=25 RoHS product Applications General purpose inverters Induction heating(IH) UPS Order Codes Marking Package MSG25T120FQC MSG25T120FQC TO-247 Absolute Ratings Tc=25 Parameter Symbol MSG25T120FQC Unit Collector-Emmiter Voltage Vces 1200

 7.11. Size:1732K  cn maspower
 msg25t120fl.pdf

MSG25T120FL High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod