G25T120D Datasheet. Specs and Replacement

Type Designator: G25T120D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 278 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 77 pF

Package: TO247

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G25T120D datasheet

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G25T120D

G25T120D Insulated Gate Bipolar Transistor General Description V 1200 V CES Using DongHai's proprietary Planar design and advanced I 25 A C FS technology, the 1200V FS IGBT offers superior conduction P T =25 278 W tot C and switching performances, high avalanche ruggedness and V 2.0 V CE(SAT) easy parallel operation. Features FS Trench Technology, Positive temper... See More ⇒

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G25T120D

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 7.2. Size:983K  jiaensemi
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G25T120D

JNG25T120HS3 IGBT Features 1200V,25A V =2.0V@V =15V,I =25A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switch... See More ⇒

 7.3. Size:1115K  jiaensemi
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G25T120D

JNG25T120HS IGBT Features 1200V 25A V =2.1V @V =15V,I =25A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switchi... See More ⇒

Specs: DGC50F65M2, DGC60F65M, DGC75F120M2, DGC75F65M, DGD06F65M2, DGE20F65M2, DGF30F65M2, DHG60T65D, GT30F124, G40N120D, G50T65DS, G50T65LBBW, DHG20T65D, JJT10N65SC, JJT10N65SCD, JJT10N65SGD, JJT10N65SS

Keywords - G25T120D transistor spec

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