G25T120DInsulated Gate Bipolar TransistorGeneral DescriptionV 1200 VCESUsing DongHai's proprietary Planar design and advancedI 25 ACFS technology, the 1200V FS IGBT offers superior conductionP T =25 278 Wtot Cand switching performances, high avalanche ruggedness andV 2.0 VCE(SAT)easy parallel operation.Features FS Trench Technology, Positive temper

CRG25T120BK3S CRG25T120BK3S VCES 1200 V RoHS IC 25 A Ptot TC=25 278 W VCE(sat) 2.0 V TO-247

JNG25T120HS3 IGBT Features 1200V,25A V =2.0V@V =15V,I =25A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switch

JNG25T120HS IGBT Features 1200V 25A V =2.1V @V =15V,I =25A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switchi

JNG25T120HFU1 IGBT Features 1200V,25A V =1.8V@V =15V,I =25A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching

JNG25T120AI IGBT Features 1200V 25A V =2.0V @V =15V,I =25A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other so

JNG25T120HFU2 IGBT Features 1200V,25A V =1.9V@V =15V,I =25A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching

Silicon FS Trench IGBT CRG25T120BK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 25 A Stop (FS) technology, offering superior conduction and switching 278 W Ptot TC=25VCE(sat) 2.0 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio

Silicon FS Trench IGBT CRG25T120BNR3S General Description VCES 1200 V Using CRM's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-3PN Features T

MSG25T120FPCN-Channel IGBTFeatures Low Gate charge FS Technology VCE(sat) = 1.68V @ IC = 25A High Input Impedance Short circuit withstand time 10 sApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 1200CESVGate-emitter voltage V 30GEST =25C 50CCollector curre ICT

MSG25T120FQCFeatures Low gate charge FS Technology Saturation voltage:VCE(sat),typ= 1.75V @IC=25A and TC=25 RoHS productApplications General purpose inverters Induction heating(IH) UPSOrder Codes Marking PackageMSG25T120FQC MSG25T120FQC TO-247Absolute RatingsTc=25Parameter Symbol MSG25T120FQC UnitCollector-Emmiter Voltage Vces 1200

MSG25T120FLHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod