JJT10N65SGD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JJT10N65SGD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 83 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 11 nS

Coesⓘ - Capacitancia de salida, typ: 37 pF

Encapsulados: TO220

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JJT10N65SGD datasheet

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JJT10N65SGD

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JJT10N65SGD

650V 10A Trench and Field Stop IGBT JJT10N65SC Key performance TO-263 V =650V CE I =10A@T =100 C C V =1.8 V CE(sat) C Features G High ruggedness performance E 10 s short circuit capability Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant Appl

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JJT10N65SGD

650V 10A Trench and Field Stop IGBT JJT10N65ST Key performance V =650V CE TO-252 I =10A@T =100 C C V =1.8 V CE(sat) C Features High ruggedness performance G 10 s short circuit capability E Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant Appl

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JJT10N65SGD

650V 10A Trench and Field Stop IGBT JJT10N65SCD Key performance TO-263 V =650V CE I =10A@T =100 C C V =1.8 V CE(sat) C Features G High ruggedness performance E 10 s short circuit capability Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant

MOSTRAR MÁS

Otros transistores... DHG60T65D, G25T120D, G40N120D, G50T65DS, G50T65LBBW, DHG20T65D, JJT10N65SC, JJT10N65SCD, GT30J127, JJT10N65SS, JJT10N65ST, JJT120N75SA, JJT50N65HE, JJT50N65LE, JJT50N65UE, JJT50N65UH, JJT15N120SE