JJT10N65SGD PDF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

JJT10N65SGD PDF Specs and Replacement

   Type Designator: JJT10N65SGD
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 83 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   tr ⓘ - Rise Time, typ: 11 nS
   Coesⓘ - Output Capacitance, typ: 37 pF
   Package: TO220

JJT10N65SGD Substitution

- IGBT ⓘ Cross-Reference Search

JJT10N65SGD PDF specs

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650V 10A Trench and Field Stop IGBT JJT10N65SC Key performance TO-263 V =650V CE I =10A@T =100 C C V =1.8 V CE(sat) C Features G High ruggedness performance E 10 s short circuit capability Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant Appl... See More ⇒

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650V 10A Trench and Field Stop IGBT JJT10N65ST Key performance V =650V CE TO-252 I =10A@T =100 C C V =1.8 V CE(sat) C Features High ruggedness performance G 10 s short circuit capability E Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant Appl... See More ⇒

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650V 10A Trench and Field Stop IGBT JJT10N65SCD Key performance TO-263 V =650V CE I =10A@T =100 C C V =1.8 V CE(sat) C Features G High ruggedness performance E 10 s short circuit capability Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant ... See More ⇒