JJT10N65ST Todos los transistores

 

JJT10N65ST - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT10N65ST
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 11 nS
   Coesⓘ - Capacitancia de salida, typ: 37 pF
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de JJT10N65ST IGBT

   - Selección ⓘ de transistores por parámetros

 

JJT10N65ST Datasheet (PDF)

 ..1. Size:2557K  jiejie micro
 jjt10n65st.pdf pdf_icon

JJT10N65ST

650V 10A Trench and Field Stop IGBTJJT10N65STKey performance: V =650VCETO-252 I =10A@T =100C C V =1.8 VCE(sat)CFeatures: High ruggedness performanceG 10s short circuit capabilityE Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantAppl

 5.1. Size:2552K  jiejie micro
 jjt10n65sc.pdf pdf_icon

JJT10N65ST

650V 10A Trench and Field Stop IGBTJJT10N65SCKey performance:TO-263 V =650VCE I =10A@T =100C C V =1.8 VCE(sat)CFeatures:G High ruggedness performanceE 10s short circuit capability Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantAppl

 5.2. Size:3515K  jiejie micro
 jjt10n65scd.pdf pdf_icon

JJT10N65ST

650V 10A Trench and Field Stop IGBTJJT10N65SCDKey performance:TO-263 V =650VCE I =10A@T =100C C V =1.8 VCE(sat)CFeatures:G High ruggedness performanceE 10s short circuit capability Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant

 5.3. Size:2850K  jiejie micro
 jjt10n65ss.pdf pdf_icon

JJT10N65ST

650V 10A Trench and Field Stop IGBTJJT10N65SSKey performance: V =650VCETO-220F I =10A@T =100C C V =1.8 VCE(sat)Features: High ruggedness performance 10s short circuit capabilityGCE Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantApp

MOSTRAR MÁS

Otros transistores... G40N120D , G50T65DS , G50T65LBBW , DHG20T65D , JJT10N65SC , JJT10N65SCD , JJT10N65SGD , JJT10N65SS , RJP30H2A , JJT120N75SA , JJT50N65HE , JJT50N65LE , JJT50N65UE , JJT50N65UH , JJT15N120SE , JJT15N65SC , JJT15N65SG .

 

 
Back to Top

 


 
.