All IGBT. JJT10N65ST Datasheet

 

JJT10N65ST Datasheet and Replacement


   Type Designator: JJT10N65ST
   Type: IGBT + Anti-Parallel Diode
   Marking Code: T1065ST
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 11 nS
   Coesⓘ - Output Capacitance, typ: 37 pF
   Qg ⓘ - Total Gate Charge, typ: 28 nC
   Package: TO252
 
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JJT10N65ST Datasheet (PDF)

 ..1. Size:2557K  jiejie micro
 jjt10n65st.pdf pdf_icon

JJT10N65ST

650V 10A Trench and Field Stop IGBTJJT10N65STKey performance: V =650VCETO-252 I =10A@T =100C C V =1.8 VCE(sat)CFeatures: High ruggedness performanceG 10s short circuit capabilityE Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantAppl

 5.1. Size:2552K  jiejie micro
 jjt10n65sc.pdf pdf_icon

JJT10N65ST

650V 10A Trench and Field Stop IGBTJJT10N65SCKey performance:TO-263 V =650VCE I =10A@T =100C C V =1.8 VCE(sat)CFeatures:G High ruggedness performanceE 10s short circuit capability Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantAppl

 5.2. Size:3515K  jiejie micro
 jjt10n65scd.pdf pdf_icon

JJT10N65ST

650V 10A Trench and Field Stop IGBTJJT10N65SCDKey performance:TO-263 V =650VCE I =10A@T =100C C V =1.8 VCE(sat)CFeatures:G High ruggedness performanceE 10s short circuit capability Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant

 5.3. Size:2850K  jiejie micro
 jjt10n65ss.pdf pdf_icon

JJT10N65ST

650V 10A Trench and Field Stop IGBTJJT10N65SSKey performance: V =650VCETO-220F I =10A@T =100C C V =1.8 VCE(sat)Features: High ruggedness performance 10s short circuit capabilityGCE Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantApp

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Datasheet: G40N120D , G50T65DS , G50T65LBBW , DHG20T65D , JJT10N65SC , JJT10N65SCD , JJT10N65SGD , JJT10N65SS , RJP30H2A , JJT120N75SA , JJT50N65HE , JJT50N65LE , JJT50N65UE , JJT50N65UH , JJT15N120SE , JJT15N65SC , JJT15N65SG .

Keywords - JJT10N65ST transistor datasheet

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