JJT50N65HE Todos los transistores

 

JJT50N65HE IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT50N65HE
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 535 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 82 nS
   Coesⓘ - Capacitancia de salida, typ: 170 pF
   Paquete / Cubierta: TO247
 

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JJT50N65HE PDF specs

 ..1. Size:4257K  jiejie micro
 jjt50n65he.pdf pdf_icon

JJT50N65HE

650V 50A Trench and Field Stop IGBT JJT50N65HE Key performance V =650V CE TO-247 I =50A@T =100 C C V =1.8V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Uninterruptib... See More ⇒

 6.1. Size:3697K  jiejie micro
 jjt50n65uh.pdf pdf_icon

JJT50N65HE

650V 50A Trench and Field Stop IGBT JJT50N65UH Key performance TO-3P V =650V CE I =50A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology. G C Easy parallel switching capability. E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Welding machin... See More ⇒

 6.2. Size:4943K  jiejie micro
 jjt50n65le.pdf pdf_icon

JJT50N65HE

650V 50A Trench and Field Stop IGBT JJT50N65LE Key performance V =650V CE TO-247 I =50A@T =100 C C V =1.7V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High ruggedness performance. RoHS compliant. Applications Inducting heating Resonant converters Microwave ovens Packag... See More ⇒

 6.3. Size:3693K  jiejie micro
 jjt50n65ue.pdf pdf_icon

JJT50N65HE

650V 50A Trench and Field Stop IGBT JJT50N65UE Key performance V =650V CE TO-247 I =50A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Welding machi... See More ⇒

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Otros transistores... G50T65LBBW , DHG20T65D , JJT10N65SC , JJT10N65SCD , JJT10N65SGD , JJT10N65SS , JJT10N65ST , JJT120N75SA , GT30J127 , JJT50N65LE , JJT50N65UE , JJT50N65UH , JJT15N120SE , JJT15N65SC , JJT15N65SG , JJT15N65SS , JJT15N65SY .

 

 
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