All IGBT. JJT50N65HE Datasheet

 

JJT50N65HE Datasheet and Replacement


   Type Designator: JJT50N65HE
   Type: IGBT + Anti-Parallel Diode
   Marking Code: T5065HE
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 535 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 82 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Qg ⓘ - Total Gate Charge, typ: 158 nC
   Package: TO247
 

 JJT50N65HE substitution

   - IGBT ⓘ Cross-Reference Search

 

JJT50N65HE Datasheet (PDF)

 ..1. Size:4257K  jiejie micro
 jjt50n65he.pdf pdf_icon

JJT50N65HE

650V 50A Trench and Field Stop IGBTJJT50N65HEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninterruptib

 6.1. Size:3697K  jiejie micro
 jjt50n65uh.pdf pdf_icon

JJT50N65HE

650V 50A Trench and Field Stop IGBTJJT50N65UHKey performance:TO-3P V =650VCE I =50A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology.GC Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machin

 6.2. Size:4943K  jiejie micro
 jjt50n65le.pdf pdf_icon

JJT50N65HE

650V 50A Trench and Field Stop IGBTJJT50N65LEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.7VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High ruggedness performance. RoHS compliant.Applications: Inducting heating Resonant converters Microwave ovensPackag

 6.3. Size:3693K  jiejie micro
 jjt50n65ue.pdf pdf_icon

JJT50N65HE

650V 50A Trench and Field Stop IGBTJJT50N65UEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

SHOW MORE

Datasheet: G50T65LBBW , DHG20T65D , JJT10N65SC , JJT10N65SCD , JJT10N65SGD , JJT10N65SS , JJT10N65ST , JJT120N75SA , IXGH60N60 , JJT50N65LE , JJT50N65UE , JJT50N65UH , JJT15N120SE , JJT15N65SC , JJT15N65SG , JJT15N65SS , JJT15N65SY .

Keywords - JJT50N65HE transistor datasheet

 JJT50N65HE cross reference
 JJT50N65HE equivalent finder
 JJT50N65HE lookup
 JJT50N65HE substitution
 JJT50N65HE replacement

 

 
Back to Top

 


 
.