JJT50N65LE Todos los transistores

 

JJT50N65LE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT50N65LE
   Tipo de transistor: IGBT + Diode
   Código de marcado: T5065LE
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 454 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 73 nS
   Coesⓘ - Capacitancia de salida, typ: 176 pF
   Qgⓘ - Carga total de la puerta, typ: 160 nC
   Paquete / Cubierta: TO247
 

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JJT50N65LE Datasheet (PDF)

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JJT50N65LE

650V 50A Trench and Field Stop IGBTJJT50N65LEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.7VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High ruggedness performance. RoHS compliant.Applications: Inducting heating Resonant converters Microwave ovensPackag

 6.1. Size:3697K  jiejie micro
 jjt50n65uh.pdf pdf_icon

JJT50N65LE

650V 50A Trench and Field Stop IGBTJJT50N65UHKey performance:TO-3P V =650VCE I =50A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology.GC Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machin

 6.2. Size:3693K  jiejie micro
 jjt50n65ue.pdf pdf_icon

JJT50N65LE

650V 50A Trench and Field Stop IGBTJJT50N65UEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

 6.3. Size:4257K  jiejie micro
 jjt50n65he.pdf pdf_icon

JJT50N65LE

650V 50A Trench and Field Stop IGBTJJT50N65HEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninterruptib

MOSTRAR MÁS

Otros transistores... DHG20T65D , JJT10N65SC , JJT10N65SCD , JJT10N65SGD , JJT10N65SS , JJT10N65ST , JJT120N75SA , JJT50N65HE , FGH60N60SMD , JJT50N65UE , JJT50N65UH , , , , , , .

 

 
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